View ADM207EARSZ_5548867.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

a adm206e/adm207e/adm208e/adm211e/adm213e information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781/329-4700 www.analog.com fax: 781/461-3113 ?2005 analog devices, inc. all rights reserved. rev. d emi-emc-compliant, 15 kv esd protected, rs-232 line drivers/receivers functional block diagram c1+ c1 c2+ c2 v cc 0.1 f 10v 0.1 f 10v v+ v +5v to +10v voltage doubler 14 12 13 5v input 0.1 f 6.3v +10v to ?0v voltage inverter 17 0.1 f 10v t1 2 7 t1 out t1 in 11 0.1 f 3 6 t2 out t2 in t3 1 20 t3 out t3 in t4 28 21 t4 out t4 in t2 8 9 r3 r4 r5 25 27 23 18 4 19 26 22 24 5 r1 r2 adm211e adm213e r1 out r2 out r3 out r4 out r5 out r1 in r2 in r3 in r4 in r5 in shdn (adm211e) shdn (adm213e) en (adm211e) en (adm213e) cmos inputs * cmos outputs eia/tia-232 outputs eia/tia-232 inputs ** gnd 10 notes: * internal 400k pull-up resistor on each cmos input ** internal 5k pull-down resistor on each rs-232 input 15 16 features complies with 89/336/eec emc directive esd protection to iec1000-4-2 (801.2) 8 kv: contact discharge 15 kv: air-gap discharge 15 kv: human body model fast transient burst (eft) immunity (iec1000-4-4) low emi emissions (en55022) eliminates costly tranzorbs 230 kbits/s data rate guaranteed single 5 v power supply shutdown mode 1 w plug-in upgrade for max2xxe space saving tssop package available applications laptop computers notebook computers printers peripherals modems general description the adm2xxe is a family of robust rs-232 and v.28 interface devices that operates from a single 5 v power supply. these prod- u cts are suitable for operation in harsh electrical environm ents and are compliant with the eu directive on emc (89/336/eec). t he level of emissions and immunity are both in compli ance. em immunity includes esd protection in excess of 15 kv on all i-o lines (1000-4-2), fast transient burst protection (1000-4-4) and radiated immunity (1000-4-3). em emissions include radiated and conducted emissions as required by information technology equipment en55022, cispr22. all devices fully conform to the eia-232e and ccitt v.28 specifications and operate at data rates up to 230 kbps. shutdown and enable control pins are provided on some of the products. see table i. the shutdown function on the adm211e disables the charge pump and all transmitters and receivers. on the adm213e the charge pump, all transmitters, and three of the five receivers are disabled. the remaining two receivers remain active, thereby allo wing monitoring of peripheral devices. this feature allows t he device to be shut down until a peripheral device begins com munication. the active receivers can alert the processor which can then take the adm213e out of the shutdown mode. operating from a single 5 v supply, four external 0.1 f capaci- tors are required. the adm207e and adm208e are available in 24-lead dip, so, ssop, and tssop packages. the adm211e and adm213e are available in 28-lead so, ssop, and tssop packages. all products are backward-compatible with earlier adm2xx products, facilitating easy upgrading of older designs. table i. selection table model supply voltage drivers receivers esd protection shutdown enable packages adm206e 5 v 4 3 15 kv yes yes r-24 adm207e 5 v 5 3 15 kv no no n, r, rs, ru-24 adm208e 5 v 4 4 15 kv no no n, r, rs, ru-24 adm211e 5 v 4 5 15 kv yes yes r, rs, ru-28 adm213e 5 v 4 5 15 kv yes ( sd ) * yes (en) r, rs, ru-28 * two receivers active.
rev. d e2e table iii. adm213e truth table shdn en status t out 1-4 r out 1-3 r out 4-5 00 shutdown disabled disabled disabled 01 shutdown disabled disabled enabled 10 normal enabled disabled disabled operation 11 normal enabled enabled enabled operation adm206e/adm207e/adm208e/adm211e/adm213eespecifica tions (v cc = 5.0 v 10%, c1ec4 = 0.1 f. all specifications t min to t max unless otherwise noted.) parameter min typ max unit test conditions/comments operating voltage range 4.5 5.0 5.5 v v cc power supply current 3.5 13 ma no load shutdown supply current 0.2 10 a input pull-up current 10 25 at in = gnd input logic threshold low, v inl 0.8 v t in , en, en , shdn, shdn , input logic threshold high, v inh 2.0 v t in input logic threshold high, v inh 2.0 v en, en , shdn, shdn cmos output voltage low, v ol 0.4 v i out = 1.6 ma cmos output voltage high, v oh 3.5 v i out = e40 a cmos output leakage current 0.05 10 a en = v cc , en = gnd, 0 v r out v cc eia-232 input voltage range * e30 +30 v eia-232 input threshold low 0.8 1.3 v eia-232 input threshold high 2.0 2.4 v eia-232 input hysteresis 0.65 v eia-232 input resistance 3 5 7 k t a = 0 c to 85 c output voltage swing 5.0 9.0 v all transmitter outputs loaded with 3 k to ground transmitter output resistance 300 v cc = 0 v, v out = 2 v rs-232 output short circuit current 6 20 60 ma maximum data rate 230 kbps r l = 3 k to 7 k , c l = 50 pf to 2500 pf receiver propagation delay tphl, tplh 0.4 2 sc l = 150 pf receiver output enable time, t er 120 ns receiver output disable time, t dr 120 ns transmitter propagation delay tphl, tplh 1 sr l = 3 k , c l = 2500 pf transition region slew rate 8 v/ sr l = 3 k , c l = 50 pf to 2500 pf measured from +3 v to e3 v or e3 v to +3 v esd protection (i-o pins) 15 kv human body model 15 kv iec1000-4-2 air discharge 8k vi ec1000-4-2 contact discharge emi immunity 10 v/m iec1000-4-3 * guaranteed by design. specifications subject to change without notice. table ii. adm211e truth table shdn en status t out 1-4 r out 1-5 00 normal enabled enabled operation 01 normal enabled disabled operation 1x shutdown disabled disabled x = don?t care.
rev. d e3e adm206e/adm207e/adm208e/adm211e/adm213e absolute maximum ratings * (t a = 25 c unless otherwise noted.) v cc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e0.3 v to +6 v v+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (v cc e0.3 v) to +14 v ve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 v to e14 v input voltages t in . . . . . . . . . . . . . . . . . . . . . . . . . e0.3 v to (v+, +0.3 v) r in . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 v output voltages t out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 v r out . . . . . . . . . . . . . . . . . . . . . . . e0.3 v to (v cc +0.3 v) short-circuit duration t out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous power dissipation n-24 pdip (derate 13.5 mw/ c above 70 c) . . 1000 mw r-24 soic (derate 12 mw/ c above 70 c) . . . . . 900 mw rs-24 ssop (derate 12 mw/ c above 70 c) . . . . . 850 mw ru-24 tssop (derate 12 mw/ c above 70 c) . . . 900 mw r-28 soic (derate 12 mw/ c above 70 c) . . . . . . 900 mw rs-28 ssop (derate 10 mw/ c above 70 c) . . . . . 900 mw ru-28 tssop (derate 12 mw/ c above 70 c) . . . 900 mw operating temperature range industrial (a version) . . . . . . . . . . . . . . . . e40 c to +85 c storage temperature range . . . . . . . . . . . . e65 c to +150 c lead temperature (soldering, 10 sec) . . . . . . . . . . . . 300 c esd rating (mil-std-883b) (i-o pins) . . . . . . . . . 15 kv esd rating (iec1000-4-2 air) (i-o pins) . . . . . . . . 15 kv esd rating (iec1000-4-2 contact) (i-o pins) . . . . . 8 kv * this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specifica- tion is not implied. exposure to absolute maximum rating conditions for extended periods of time may affect reliability. caution esd (electrostatic discharge) sensitive device. electrostatic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge without detection. although the adm206e/adm207e/adm208e/adm211e/adm213e features proprietary esd protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. therefore, proper esd precautions are recommended to avoid performance degradation or loss of functionality. warning! esd sensitive device
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e4e ordering guide temperature package package model range description option adm206ear e40 c to +85 c soic r-24 adm206ear-reel e40 c to +85 c soic r-24 adm206earz * e40 c to +85 c soic r-24 adm206earz-reel * e40 c to +85 c soic r-24 adm207ean e40 c to +85 cp dip n-24 adm207eanz * e40 c to +85 cp dip n-24 adm207ear e40 c to +85 c soic r-24 adm207ear-reel e40 c to +85 c soic r-24 adm207earz * e40 c to +85 c soic r-24 adm207earz-reel * e40 c to +85 c soic r-24 adm207ears e40 c to +85 c ssop rs-24 adm207ears-reel e40 c to +85 c ssop rs-24 ADM207EARSZ * e40 c to +85 c ssop rs-24 ADM207EARSZ-reel * e40 c to +85 c ssop rs-24 adm207earu e40 c to +85 c tssop ru-24 adm207earu-reel e40 c to +85 c tssop ru-24 adm207earu-reel7 e40 c to +85 c tssop ru-24 adm208ean e40 c to +85 cp dip n-24 adm208eanz * e40 c to +85 cp dip n-24 adm208ear e40 c to +85 c soic r-24 adm208ear-reel e40 c to +85 c soic r-24 adm208earz * e40 c to +85 c soic r-24 adm208earz-reel * e40 c to +85 c soic r-24 adm208ears e40 c to +85 c ssop rs-24 adm208ears-reel e40 c to +85 c ssop rs-24 adm208earsz * e40 c to +85 c ssop rs-24 adm208earsz-reel * e40 c to +85 c ssop rs-24 adm208earu e40 c to +85 c tssop ru-24 adm208earu-reel e40 c to +85 c tssop ru-24 adm208earu-reel7 e40 c to +85 c tssop ru-24 adm211ear e40 c to +85 c soic r-28 adm211ear-reel e40 c to +85 c soic r-28 adm211earz * e40 c to +85 c soic r-28 adm211earz-reel * e40 c to +85 c soic r-28 adm211ears e40 c to +85 c ssop rs-28 adm211ears-reel e40 c to +85 c ssop rs-28 adm211earsz * e40 c to +85 c ssop rs-28 adm211earsz-reel * e40 c to +85 c ssop rs-28 adm211earu e40 c to +85 c tssop ru-28 adm211earu-reel e40 c to +85 c tssop ru-28 adm211earu-reel7 e40 c to +85 c tssop ru-28 adm211earuz * e40 c to +85 c tssop ru-28 adm211earuz-reel * e40 c to +85 c tssop ru-28 adm211earuz-reel7 * e40 c to +85 c tssop ru-28 adm213ear e40 c to +85 c soic r-28 adm213ear-reel e40 c to +85 c soic r-28 adm213earz * e40 c to +85 c soic r-28 adm213earz-reel * e40 c to +85 c soic r-28 adm213ears e40 c to +85 c ssop rs-28 adm213ears-reel e40 c to +85 c ssop rs-28 adm213earsz * e40 c to +85 c ssop rs-28 adm213earsz-reel * e40 c to +85 c ssop rs-28 adm213earu e40 c to +85 c tssop ru-28 adm213earu-reel e40 c to +85 c tssop ru-28 adm213earu-reel7 e40 c to +85 c tssop ru-28 adm213earuz * e40 c to +85 c tssop ru-28 adm213earuz-reel * e40 c to +85 c tssop ru-28 adm213earuz-reel7 * e40 c to +85 c tssop ru-28 * z = pb-free part.
rev. d e5e adm206e/adm207e/adm208e/adm211e/adm213e 13 16 15 14 24 23 22 21 20 19 18 17 top view (not to scale) 12 11 10 9 8 1 2 3 4 7 6 5 adm207e t3 out t5 in r2 out r2 in t4 out t1 out t2 out r1 in t3 in t4 in t5 out r1 out t2 in t1 in gnd v cc c1+ ve r3 in r3 out v+ c1e c2e c2+ figure 3. adm207e pin configuration cmos inputs * cmos outputs t1 in adm207e eia/tia-232 outputs t1 out gnd 8 t2 in t3 in t4 in t2 out t3 out t4 out eia/tia-232 inputs ** r1 in r2 in r3 in r1 out r2 out r3 out * internal 400k pull-up resistor on each cmos input ** internal 5k pull-down resistor on each rs-232 input +5v to +10v voltage doubler +10v to e10v voltage inverter 0.1 f 6.3v 5v input v cc v+ ve c1+ c1e c2+ c2e 0.1 f 10v 0.1 f 10v 0.1 f 10v 0.1 f 14 13 12 10 15 11 9 3 1 2 24 t3 t4 t2 t1 19 6 7 18 16 4 23 r1 r2 r3 17 22 5 t5 in t5 out 20 t5 21 figure 4. adm207e typical operating circuit 13 16 15 14 24 23 22 21 20 19 18 17 top view (not to scale) 12 11 10 9 8 1 2 3 4 7 6 5 adm206e t3 out sd r2 out r2 in t4 out t1 out t2 out r1 in t3 in t4 in en r1 out t2 in t1 in gnd v cc c1+ ve r3 in r3 out v+ c1e c2e c2+ figure 1. adm206e dip/soic/ssop pin configuration ttl/cmos inputs * ttl/cmos outputs t1 in adm206e sd rs-232 outputs t1 out gnd t2 in t3 in t4 in t2 out t3 out t4 out rs-232 inputs ** r1 in r2 in r3 in r1 out r2 out r3 out * internal 400k pull-up resistor on each ttl/cmos input ** internal 5k pull-down resistor on each rs-232 input en +5v to +10v voltage doubler +10v to e10v voltage inverter 0.1 f 6.3v 5v input v cc v+ ve c1+ c1e c2+ c2e 0.1 f 6.3v 0.1 f 16v 0.1 f 16v 0.1 f 8 14 13 12 10 15 11 9 20 3 1 2 24 t3 t4 t2 t1 19 6 7 18 21 16 4 23 r1 r2 r3 17 22 5 figure 2. adm206e typical operating circuit
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e6e 13 16 15 14 24 23 22 21 20 19 18 17 top view (not to scale) 12 11 10 9 8 1 2 3 4 7 6 5 adm208e t2 out t4 in r3 out r3 in t3 out t1 out r2 in r2 out t2 in t3 in t4 out t1 in r1 out r1 in gnd v cc c1+ ve r4 in r4 out v+ c1e c2e c2+ figure 5. adm208e pin configuration cmos inputs * cmos outputs t1 in adm208e eia/tia-232 outputs t1 out gnd 8 t2 in t3 in t4 in t2 out t3 out t4 out eia/tia-232 inputs ** r1 in r2 in r3 in r1 out r2 out r3 out * internal 400k pull-up resistor on each cmos input ** internal 5k pull-down resistor on each rs-232 input +5v to +10v voltage doubler +10v to e10v voltage inverter 0.1 f 6.3v 5v input v cc v+ ve c1+ c1e c2+ c2e 0.1 f 10v 0.1 f 10v 0.1 f 10v 0.1 f 14 13 12 10 15 11 9 20 1 2 24 t3 t4 t2 t1 21 18 5 19 23 7 3 r1 r2 r3 4 22 6 r4 in r4 out 16 r4 17 figure 6. adm208e typical operating circuit 14 13 12 11 10 9 8 1 2 3 4 7 6 5 17 16 15 20 19 18 28 27 26 25 24 23 22 21 top view (not to scale) adm211e t3 out r3 out r3 in t4 out t1 out t2 out r2 in r4 out r4 in r2 out t2 in t1 in r1 out r1 in gnd r5 out t3 in t4 in v cc c1+ v+ c1e r5 in c2+ c2e ve shdn en figure 7. adm211e pin configuration cmos inputs * ttl/cmos outputs t1 in adm211e shdn eia/tia-232 outputs t1 out gnd t2 in t3 in t4 in t2 out t3 out t4 out eia/tia-232 inputs ** r1 in r2 in r3 in r1 out r2 out r3 out * internal 400k pull-up resistor on each cmos input ** internal 5k pull-down resistor on each rs-232 input en +5v to +10v voltage doubler +10v to e10v voltage inverter 14 12 11 0.1 f 6.3v 5v input v cc v+ ve c1+ c1e c2+ c2e 0.1 f 10v 0.1 f 10v 0.1 f 10v 13 0.1 f 10 15 17 3 1 2 28 t3 t4 t2 t1 21 6 7 20 25 27 9 4 r1 r2 r3 5 8 16 r4 in r5 in r4 out r5 out 18 23 r4 r5 19 26 24 22 figure 8. adm211e typical operating circuit
rev. d e7e adm206e/adm207e/adm208e/adm211e/adm213e 14 13 12 11 10 9 8 1 2 3 4 7 6 5 17 16 15 20 19 18 28 27 26 25 24 23 22 21 top view (not to scale) adm213e t3 out r3 out r3 in t4 out t1 out t2 out r2 in r4 out * r4 in * r2 out t2 in t1 in r1 out r1 in gnd r5 out * t3 in t4 in v cc c1+ v+ c1e r5 in * c2+ c2e ve en * active in shutdown shdn figure 9. adm213e pin configuration pin function descriptions mnemonic function v cc power supply input: 5 v 10%. v+ internally generated positive supply (+9 v nominal). ve internally generated negative supply (e9 v nominal). gnd ground pin. must be connected to 0 v. c1+, c1e external capacitor 1 is connected between these pins. 0.1 f capacitor is recommended but larger capacitors up to 47 f may be used. c2+, c2e external capacitor 2 is connected between these pins. 0.1 f capacitor is recommended but larger capacitors up to 47 f may be used. t in transmitter (driver) inputs. these inputs accept ttl/cmos levels. an internal 400 k pull-up resistor to v cc is connected on each input. t out transmitter (driver) outputs. these are rs-232 signal levels (typically 9 v). r in receiver inputs. these inputs accept rs-232 si gnal levels. an internal 5 k pull-down resistor to gnd is connected on each input. r out receiver outputs. these are cmos output logic levels. en/ en receiver enable (active high on adm213e, active low on adm211e); this input is used to enable/disable the receiver outputs. with en = low adm211e (en = high adm213e), the receiver outputs are enabled. with en = high (en = low adm213e), the receiver outputs are placed in a high impedance state. shdn /shdn shutdown control (active low on adm213e, active high on adm211e); refer to table ii. in shutdown the charge pump is disabled, the transmitter outputs are turned off and all receiver outputs (adm211e), receivers r1, r2, r3 (adm213e) are placed in a high impedance state. receivers r4 and r5 on the adm213e continue to operate normally during shutdown. power consumption in shutdown for all parts reduces to 5 w. ttl/cmos inputs 1 ttl/cmos outputs r5 out 3 t1 in adm213e shdn rs-232 outputs t1 out gnd t2 in t3 in t4 in t2 out t3 out t4 out rs-232 inputs 2 r1 in r2 in r3 in r1 out r2 out r3 out notes 1 internal 400k pull-up resistor on each cmos input 2 internal 5k pull-down resistor on each rs-232 input 3 active in shutdown en +5v to +10v voltage doubler +10v to e10v voltage inverter 14 12 11 0.1 f 6.3v 5v input v cc v+ ve c1+ c1e c2+ c2e 0.1 f 16v 0.1 f 16v 0.1 f 16v 13 0.1 f 10 15 17 3 1 2 28 t3 t4 t2 t1 21 6 7 20 25 27 9 4 r1 r2 r3 5 8 16 r4 in 3 r5 in 3 r4 out 3 18 23 r4 r5 19 26 24 22 figure 10. adm213e typical operating circuit
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e8e t ypical performance characteristics log frequency e mhz 80 70 0 0.3 30 0.6 1 60 50 10 40 30 20 3618 limit db v tpc 1. emc conducted emissions load capacitance e pf e3 500 2500 1000 2000 7 5 3 1 e1 e5 e7 0 1500 3000 9 tx o/p e v tx o/p hi tx o/p lo tpc 2. transmitter output voltage high/low vs. load capacitance @ 230 kbps 24 68 10 tx o/p hi 15 10 5 0 e15 load current e ma tx o/p e v 0 e10 e5 tx o/p lo tpc 3. transmitter output voltage vs. load current start 30.0 mhz stop 200.0 mhz limit db v 80 70 60 50 40 30 20 10 0 tpc 4. emc radiated emissions v cc e v e1 5.5 6.0 4.0 4.5 5.0 9 7 5 3 1 e3 e5 e7 e9 tx o/p e v tx o/p hi loaded tx o/p lo loaded tpc 5. transmitter output voltage vs. v cc sd v+ ve 1 ch 3 ch 2 ch 1 ch 1 5.00v 5.00v m 50.0s 3.1v 5.00v v+, ve exiting sd t t t 2 3 tpc 6. charge pump v+, ve exiting shutdown
rev. d e9e adm206e/adm207e/adm208e/adm211e/adm213e v cc e v 350 0 4.5 4.7 impedance e 4.9 5.1 5.3 5.5 300 250 200 150 100 50 ve v+ tpc 7. charge pump impedance vs. v cc load currente ma 15 5101 520 10 5 e5 e10 e15 0 v+/ve e v 0 v+ ve tpc 8. charge pump v+, ve vs. current
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e10e general description the adm206e/adm207e/adm208e/adm211e/adm213e are ruggedized rs-232 line drivers/receivers which operate from a single 5 v supply. step-up volt age converters coupled with level s hifting transmitters and receivers allow rs-232 levels to be devel- oped while operating from a single 5 v supply. features include low power consumption, high transmission rates, an d compatibility with the eu directive on electromagnetic compatibility. em compatibility includes protection against radiated and conducted interference, including high levels of electrostatic discharge. all r s-232 inputs and outputs contain prote ction against electro- s tatic discharges up to 15 kv and electrical fast transients up to 2 kv. this ensures compliance to i e1000-4-2 and iec1000-4-4 requirements. the devices are ideally suited for operation in electrically harsh environments or where rs-232 cables are frequently being unplugged. they are also immune to high rf field strengths without special shielding precautions. emissions are also controlled to within very strict lim its. cmos technology is used to keep the power dissipation to an absolute minimum allowing maximum battery life in portable applications. the admxxe is a modification, enhancement, and improve- ment to the ad230ead241 family and its derivatives. it is essentially plug-in compatible and does not have materially different applications. circuit description the internal circuitry consists of four main sections. 1. a charge pump voltage converter 2. 5 v logic to eia-232 transmitters 3. eia-232 to 5 v logic receivers 4. transient protection circuit on all i-o lines charge pump dc-dc voltage converter t he charge pump voltage converter consists of an 200 khz oscillator and a switching matrix. the converter generates a 10 v supply from the input 5 v level. this is done in two stages using a switched capacitor technique as illustrated below. first, the 5 v input supply is doubled to 10 v using capacitor c1 as the charge storage element. the 10 v level is then inverted to generate e10 v using c2 as the storage element. capacitors c3 and c4 are used to reduce the output ripple. if desired, larger capacitors (up to 47 f) can be used for capaci- t ors c1ec4. this facilitates direct substitution with older gen eration charge pump rs-232 transceivers. the v+ and ve supplies may also be used to power external circuitry if the current requirements are small. please refer to tpc 9 in the typical performance characteristics section. s1 s2 c1 s4 s3 c3 v+ = 2v cc v cc v cc internal oscillator gnd figure 11. charge pump voltage doubler s1 s2 c2 s4 s3 c4 ve = e(v+) v+ gnd internal oscillator gnd from voltage doubler figure 12. charge pump voltage inverter transmitter (driver) section the drivers convert 5 v logic input levels into eia-232 output levels. with v cc = 5 v and driving an eia-232 load, the output voltage swing is typically 9 v. unused inputs may be left unconnected, as an internal 400 k pull-up resistor pulls them high forcing the outputs into a low s tate. the input pull-up resistors typically source 8 a when grounded, so unused inputs should either be connected to v cc or left unconnected in order to minimize power consumption. receiver section the receivers are inverting level shifters which accept eia-232 input levels and translate them into 5 v logic output levels. the inputs have internal 5 k pull-down resistors to ground and are also protected against overvoltages of up to 25 v. the guaranteed switching thresholds are 0.4 v minimum and 2.4 v maximum. unconnected inputs are pulled to 0 v by the internal 5 k pull-down resistor. this, therefore, results in a logic 1 output level for unconnected inputs or for inputs connected to gnd. the receivers have schmitt trigger input with a hysteresis level of 0.65 v. this ensures error-free reception for both noisy inputs and for inputs with slow transition times. enable and shutdown table ii and table iii show the truth tables for the enable and shutdown control signals. the enable function is intended to facilitate data bus connections where it is desirable to three-state the receiver outputs. in the disabled mode, all receiver outputs are placed in a high impedance state. the shutdown function is intended to shut the device down, thereby minimizing the quies- cent current. in shutdown, all transmitters are disabled and all receivers on the adm211e are three-stated. on the adm213e, receivers r4 and r5 remain enabled in shutdown. note that the transmitters are disabled but are not three-stated in shutdown, so it is not permitted to connect multiple (rs-232) driver out- puts together. the shutdown feature is very useful in battery-operated systems since it reduces the power consumption to 1 w. during shut- down the charge pump is also disabled. the shutdown control i nput is active high on the adm211e, and it is active low on the adm213e. when exiting shutdown, the charge pump is restarted and it takes approximately 100 s for it to reach its steady state operating condition.
rev. d e11e adm206e/adm207e/adm208e/adm211e/adm213e high baud rate the adm2xxe feature high slew rates permitting data transmis- s ion at rates well in excess of the eia-232-e specifications. rs-232 levels are maintained at data rates up to 230 kb/s even under worst case loading conditions. this allows for high speed data links between two terminals, making it suitable for the new generation modem standards which require data rates of 200 kb/s. the slew rate is internally controlled to less than 30 v/ s to minimize emi interference. t dr 3v 0v en input voh vol receiver output voh e0.1v vol +0.1v note: en is the complement of en for the adm213e figure 13. receiver disable timing t er 3v 0v en input receiver output +3.5v +0.8v note: en is the complement of en for the adm213e figure 14. receiver enable timing esd/eft transient protection scheme t he adm2xxe use protective clamping structures on all inputs and outputs that clamp the voltage to a safe level and dissi pates the energy present in esd (electrostatic) and eft (electrical fast transients) discharges. a simplified schematic of the prote ction structure is shown in figures 15a and 15b. each input and output contains two back-to-back high speed clamping diodes. during normal operation, with maximum rs-232 signal levels, the diodes have no effect as one or the other is reverse-biased, depending on the polarity of the signal. if, however, the voltage exceeds about 50 v, reverse breakdown occurs and the voltage is clamped at this level. the diodes are large p-n junctions designed to handle the instantaneous cur- rent surge which can exceed several amperes. the transmitter outputs and receiver inputs have a similar pro- tection structure. the receiver inputs can also dissipate some of the energy through the internal 5 k resistor to gnd as well as through the protection diodes. the protection structure achieves esd protection up to 15 kv and eft protection up to 2 kv on all rs-232 i-o lines. the methods used to test the protection scheme are discussed later. r in rx d1 d2 receiver input r1 figure 15a. receiver input protection scheme rx d1 d2 transmitter output t out figure 15b. transmitter output protection scheme esd testing (iec1000-4-2) iec1000-4-2 (previously 801-2) specifies compliance testing usi ng two coupling methods, contact-discharge and air-gap discharge. contact discharge calls for a direct connection to the unit being tested. air-gap discharge uses a higher test voltage but does not make direct contact with the unit under test. with a ir discharge, the discharge gun is moved toward the unit under tes t, developing an arc across the air gap; hence the term air discharge. this method is influenced by humidity, temperature, barometric pressure, distance, and rate of closure of the discharge gun. the contact-discharge method, while less realistic, is more repeatable, and is gaining acceptance in preference to the air- gap method. al t hough very little energy is contained within an esd pu lse, t he extremely fast rise time, coupled with high voltages, can cau se failures in unprotected semiconductors. catastrophic de struction can occur immediately as a result of arcing or heat- ing. even if catastrophic failure does not occur immediately, the device may suffer from parametric degradation that may result in degraded performance. the cumulative effects of continuous exposure can eventually lead to complete failure. i -o lines are particularly vulnerable to esd damage. simply touching or plugging in an i-o cable can result in a static discharge that can damage or destroy the interface product connected to the i-o port. traditional esd test methods such as the mil-std-883b method 3015.7 do not fully test a product?s susceptibility to this type of discharge. this test was intended to test a product?s susceptibility to esd damage dur- ing handling. each pin is tested with respect to all other pins. there are some important differences between the traditional test and the iec test: (a) the iec test is much more stringent in terms of discharge ( e nergy. the peak current injected is over four times greater. (b) the current rise time is significantly faster in the iec test. (c) the iec test is carried out while power is applied to the device. it is possible that the esd discharge could induce latch-up in the device under test. this test, therefore, is more representative of a real-world i-o discharge where the equipment is operating normally with power applied. for maximum peace of mind, how- ever, both tests should be performed, thus ensuring maximum protection both during handling and later during field service.
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e12e r1 r2 c1 device under test high voltage generator esd test method r2 c1 h. body mil-std883b 1.5k 100pf iec1000-4-2 330 150pf figure 16. esd test standards 100 i peak e % 90 36.8 10 t dl t rl time t figure 17. human body model esd current waveform 100 i peak e % 90 10 time t 30ns 60ns 0.1 to 1ns figure 18. iec1000-4-2 esd current waveform adm2xxe products are tested using both of the above men tioned test methods. all pins are tested with respect to all other pins as per the mil-std-883b specification. in addition, all i-o pins are tested per the iec test specification. the products are tested under the following conditions: (a) power-on?normal operation (b) power-on?shutdown mode (c) power-off there are four levels of compliance defined by iec1000-4-2. adm2xxe products meet the most stringent co mpliance level for both contact and for air-gap discharge. this means that the products are able to wi thstand contact discharges in excess of 8 kv and air-gap discharges in excess of 15 kv. table iv. iec1000-4-2 compliance levels contact discharge air discharge level (kv) (kv) 12 2 24 4 36 8 48 15 table v. adm2xxe esd test results esd test method i-o pin (kv) mil-std-883b 15 iec1000-4-2 contact 8 air 15 fast transient burst testing (iec1000-4-4) iec1000-4-4 (previously 801-4) covers electrical fast transient b urst (eft) immunity. electrical fast transients occur as a result of arcing contacts in switches and relays. the tests simu- late the interference generated when, for example, a power relay d isconnects an inductive load. a spark is generated due to the w ell known back emf effect. in fact, the spark consists of a burst of sparks as the relay contacts separate. the voltage appear- ing on the line, therefore, consists of a burst of extremely fast transient impulses. a similar effect occurs when switching on fluorescent lights. the fast transient burst test defined in iec1000-4-4 simulates t his arcing, and its waveform is illustrated in figure 19. it consists of a burst of 2.5 khz to 5 khz transients repeating at 300 ms intervals. it is specified for both power and data lines. 300ms 15ms t v 5ns 0.2/0.4ms 50ns v t figure 19. iec1000-4-4 fast transient waveform
rev. d e13e adm206e/adm207e/adm208e/adm211e/adm213e table vi. v peak (kv) v peak (kv) level psu i-o 1 0.5 0.25 21 0.5 32 1 44 2 a simplified circuit diagram of the actual eft generator is illustrated in figure 20. the transients are coupled onto the signal lines using an eft coupling clamp. the clamp is 1 m long and it completely sur- r ounds the cable providing maximum coupling capacitance (50 pf to 200 pf typ) between the clamp and the cable. high energy transients are capacitively coupled onto the signal lines. fast rise times (5 ns) as specified by the standard result in very effective coupling. this test is very severe since high voltages are coupled onto the signal lines. the repetitive transients can often cause problems where single pulses do not. destructive latch-up may be induced due to the high energy content of the transients. note that this stress is applied while the interface products are powered up and are transmitting data. the eft test applies hundreds of pulses with higher energy than esd. worst-case transient current on an i-o line can be as high as 40 a. test results are classified according to the following: 1. normal performance within specification limits 2. temporary degradation or loss of performance that is self- recoverable 3. temporary degradation or loss of function or performance that requires operator intervention or system reset 4. degradation or loss of function that is not recoverable due to damage adm2xxe products have been tested under worst-case condi- tions using unshielded cables, and meet classification 2. data transmission during the transient condition is corrupted, but it may be resumed immediately following the eft event without user intervention. r c r m c c high voltage source l z s c d 50 output figure 20. iec1000-4-4 fast transient generator iec1000-4-3 radiated immunity i ec1000-4-3 (previously iec801-3) describes the measure- ment method and defines the levels of immunity to radiated electrom agnetic fields. it was originally intended to simulate the electromagnetic fields generated by portable radio transceivers or any other device that generates continuous wave radi ated electromagnetic e nergy. its scope has since been bro adened to include spurious em energy which can be radia ted from fluores- cent lights, thyristor drives, inductive loads, etc. testing for immunity involves irradiating the device with an em field. there are various methods of achieving this, including use of anechoic chamber, stripline cell, tem cell, gtem cell. a stripline cell consists of two parallel plates with an electric field developed between them. the device under test is placed within the cell and exposed to the electric field. there are three severity levels having field strengths ranging from 1 v to 10 v/m. results are classified in a similar fashion to those for iec1000-4-4. 1. normal operation 2. temporary degradation or loss of function that is self- recoverable when the interfering signal is removed 3. temporary degradation or loss of function that requires operator intervention or system reset when the interfering signal is removed 4. degradation or loss of function that is not recoverable due to damage the adm2xxe family of products easily meets classification 1 at the most stringent (level 3) requirement. in fact, field strengths up to 30 v/ m showed no performance degradation, and error- free data transmission continued even during irradiation. table vii. test severity levels (iec1000-4-3) field strength level v/m 11 23 310 emissions/interference en55 022, cispr22 defines the permitted limits of radiated and conducted interference from information technology (it) equipment. the objective of the standard is to minimize the level of emissions both conducted and radiated. for ease of measurement and analysis, conducted emissions are assumed to predominate below 30 mhz and radiated emissions are assumed to predominate above 30 mhz. conducted emissions t his is a measure of noise that is conducted onto the line power supply. switching transients from the charge pump that ar e 20 v in magnitude and containing significant energy can lead to conducted emissions. other sources of conducted emis- si ons can be due to overlap in switch on times in the charge pump voltage converter. in the voltage doubler shown below, if s2 has not fully turned off before s4 turns on, this results in a transient current glitch between v cc and gnd which results in conducted emissions. it is therefore important that the switches in the charge pump guarantee break-before-make switching under all conditions so that instantaneous short-circuit condi- tions do not occur. t he adm2xxe have been designed to minimize the switching transients and ensure break-before-make switching thereby minimizing conducted emissions. this has resulted in the level of emissions being well below the limits required by the spec ification. no additional filtering/decoupling other than the recommended 0.1 f capacitor is required.
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e14e conducted emissions are measured by monitoring the line power supply. the equipment used consists of a lisn (line impedance stabilizing network) which essentially presents a fixed imped ance at rf, and a spectrum analyzer. the spectrum analyzer scans for emissions up to 30 mhz. a plot for the adm211e is shown in figure 23. s1 s2 c1 s4 s3 c3 v+ = 2v cc v cc internal oscillator gnd v cc figure 21. charge pump voltage doubler ? 1 ? 2 switching glitches figure 22. switching glitches log frequency e mhz 80 70 0 0.3 30 0.6 1 60 50 10 40 30 20 3618 limit db v figure 23. conducted emissions plot radiated emissions ra diated emissions are measured at frequencies in ex cess of 30 mhz. rs-232 outputs designed for operation at high baud rates while driving cables can radiate high frequency em energy. the reasons already discussed which cause conducted emissions can also be responsible for radiated emissions. fast rs-232 output transitions can radiate interference, especially when lightly loaded and driving unshielded cables. charge pump devices are also prone to radiating noise due to the high frequ ency oscillator and high voltages being switched by the charge pump. the move towards smaller capacitors in order to conserve board space has resulted in higher frequency oscillators being employed in the charge pump design. this has resulted in higher levels of emission, both conducted and radiated. the rs-232 outputs on the adm2xxe products feature a controlled slew rate in order to minimize the level of radiated emissions, yet are fast enough to support data rates up to 230 kbaud. dut turntable radiated noise adjustable antenna to receiver figure 24. radiated emissions test setup figure 25 shows a plot of radiated emissions versus frequency. this shows that the levels of emissions are well within specifica- tions without the need for any additional shielding or filtering components. the adm2xxe were operated at maximum baud rates and configured in a typical rs-232 interface. testing for radiated emissions was carried out in a shielded anechoic chamber. start 30.0 mhz stop 200.0 mhz limit db v 80 70 60 50 40 30 20 10 0 figure 25. radiated emissions plot
rev. d e15e adm206e/adm207e/adm208e/adm211e/adm213e outline dimensions 24-lead plastic dual in-line package [pdip] (n-24) dimensions shown in inches and (millimeters) 24 1 12 13 1.185 (30.01) 1.165 (29.59) 1.145 (29.08) 0.295 (7.49) 0.285 (7.24) 0.275 (6.99) 0.150 (3.81) 0.135 (3.43) 0.120 (3.05) 0.015 (0.38) 0.010 (0.25) 0.008 (0.20) 0.325 (8.26) 0.310 (7.87) 0.300 (7.62) seating plane 0.015 (0.38) min 0.180 (4.57) max 0.022 (0.56) 0.018 (0.46) 0.014 (0.36) 0.150 (3.81) 0.130 (3.30) 0.110 (2.79) 0.100 (2.54) bsc 0.060 (1.52) 0.050 (1.27) 0.045 (1.14) controlling dimensions are in inches; millimeter dimensions (in parentheses) are rounded-off inch equivalents for reference only and are not appropriate for use in design compliant to jedec standards mo-095ag 24-lead standard small outline package [soic] wide body (r-24) dimensions shown in millimeters and (inches) controlling dimensions are in millimeters; inch dimensions (in parentheses) are rounded-off millimeter equivalents for reference only and are not appropriate for use in design compliant to jedec standards ms-013ad 8 0 0.75 (0.0295) 0.25 (0.0098) 45 1.27 (0.0500) 0.40 (0.0157) seating plane 0.30 (0.0118) 0.10 (0.0039) 2.65 (0.1043) 2.35 (0.0925) 1.27 (0.0500) bsc 24 13 12 1 10.65 (0.4193) 10.00 (0.3937) 7.60 (0.2992) 7.40 (0.2913) 15.60 (0.6142) 15.20 (0.5984) coplanarity 0.10 0.33 (0.0130) 0.20 (0.0079) 0.51 (0.0201) 0.31 (0.0122)
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e16e 28-lead standard small outline package [soic] wide body (r-28) dimensions shown in millimeters and (inches) controlling dimensions are in millimeters; inch dimensions (in parentheses) are rounded-off millimeter equivalents for reference only and are not appropriate for use in design compliant to jedec standards ms-013ae 0.33 (0.0130) 0.20 (0.0079) 8 0 0.75 (0.0295) 0.25 (0.0098) 45 1.27 (0.0500) 0.40 (0.0157) seating plane 0.30 (0.0118) 0.10 (0.0039) 0.51 (0.0201) 0.31 (0.0122) 2.65 (0.1043) 2.35 (0.0925) 1.27 (0.0500) bsc 28 15 14 1 18.10 (0.7126) 17.70 (0.6969) 10.65 (0.4193) 10.00 (0.3937) 7.60 (0.2992) 7.40 (0.2913) coplanarity 0.10 24-lead shrink small outline package [ssop] (rs-24) dimensions shown in millimeters 24 13 12 1 8.20 7.80 7.40 5.60 5.30 5.00 0.38 0.22 seating plane 0.05 min 0.65 bsc 2.00 max 1.85 1.75 1.65 0.95 0.75 0.55 0.25 0.09 8 4 0 0.10 coplanarity 8.50 8.20 7.90 compliant to jedec standards mo-150ag outline dimensions
rev. d e17e adm206e/adm207e/adm208e/adm211e/adm213e outline dimensions 28-lead shrink small outline package [ssop] (rs-28) dimensions shown in millimeters 0.25 0.09 0.95 0.75 0.55 8 4 0 0.05 min 1.85 1.75 1.65 2.00 max 0.38 0.22 seating plane 0.65 bsc 0.10 coplanarity 28 15 14 1 10.50 10.20 9.90 5.60 5.30 5.00 8.20 7.80 7.40 compliant to jedec standards mo-150ah 24-lead thin shrink small outline package [tssop] (ru-24) dimensions shown in millimeters 24 13 12 1 6.40 bsc 4.50 4.40 4.30 pin 1 7.90 7.80 7.70 0.15 0.05 0.30 0.19 0.65 bsc 1.20 max 0.20 0.09 0.75 0.60 0.45 8 0 seating plane compliant to jedec standards mo-153ad 0.10 coplanarity
rev. d adm206e/adm207e/adm208e/adm211e/adm213e e18e revision history location page 4/05?data sheet changed from rev. c to rev. d. changes to specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 changes to ordering guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 updated outline dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3/01?data sheet changed from rev. b to rev. c. features change 460 kbits/s to 230 kbits/s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 specifications table changed in min, typ, max, test conditions/comments columns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 absolute maximum ratings deleted some items . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 figures change made in figure 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 typical performance characteristics changes made in plots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7, 8 table v. column removed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 28-lead thin shrink small outline package [tssop] (ru-28) dimensions shown in millimeters 4.50 4.40 4.30 28 15 14 1 9.80 9.70 9.60 6.40 bsc pin 1 seating plane 0.15 0.05 0.30 0.19 0.65 bsc 1.20 max 0.20 0.09 0.75 0.60 0.45 8 0 compliant to jedec standards mo-153ae coplanarity 0.10 outline dimensions
e19e
e20e c00068e0e4/05(d)

▲Up To Search▲

Price & Availability of ADM207EARSZ

	To Download ADM207EARSZ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .